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胡光喜

系别: 微纳系统中心
职称: 副研究员
职务: 信息学院院长助理、工会主席
办公室: 物理楼136室
电话: 55664519
E-mail: gxhu@fudan.edu.cn
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教育背景
1982年至1986年   安徽大学学习,并获学士学位   
1986年至1990年   西安交通大学学习,并获硕士学位   
2000年至2003年   复旦大学学习,并获博士学位   
研究方向
半导体器件的建模与仿真、小尺寸半导体器件物理、量子统计物理
课程教学
本科课程:《半导体器件原理》、《近代物理基础》、《大学物理B(下)》
研究生课程:《半导体器件物理》、《纳米尺度器件物理》、《小尺寸MOS器件模型与仿真》
学术兼职
科研项目
主持上海市自然科学基金项目“纳米尺度石墨烯场效应管关键参数模型研究”:
主持专用集成电路与系统国家重点实验室面上项目“肖特基势垒源/漏围栅MOSFET 器件研究”。:
主持专用集成电路与系统国家重点实验室面上项目“用于超大规模集成电路新型纳米MOS场效应管的建模与仿真”。:
主持上海市自然科学基金项目“用于超大规模集成电路的纳米尺度多栅场效应管模型研究”。:
论文著作
1.Guang-Xi Hu*, Ling-Li Wang, Ran Liu, Ting-Ao Tang, and Zhi-Jun Qiu, “Quantum-mechanical study on surrounding-gate metal-oxide-semiconductor field-effect transistors”,Communications in Theoretical Physics,,2010,Vol. 54, No. 4,763-767
2.Guang-Xi Hu*, Ran Liu, Zhi-Jun Qiu, Ling-Li Wang, and Ting-Ao Tang, “Quantum mechanical effects on the threshold voltage of double-gate metal-oxide-semiconductor field-effect transistors”, Japanese Journal of Applied Physics.,,2010,vol. 49, no. 3, ,034001-1—034001-4.
3.Guangxi Hu*, Ping Xiang, Zhihao Ding, Ran Liu, Lingli Wang, and Ting-Ao Tang, “Analytical models for electric potential, threshold voltage, and subthreshold swing of junctionless surrounding-gate transistors,”IEEE Transactions on Electron Devices,,2014,Vol. 61, No. 3,688-695
4.Guang-Xi Hu*, Ran Liu, Ting-Ao Tang, and Ling-Li Wang, “Analytic investigation on the threshold voltage of fully-depleted surrounding-gate metal-oxide-semiconductor field-effect transistors”, Journal of the Korean Physical Society ,,2008,vol. 52, no. 6,pp. 1909-1912
5.Guangxi Hu*, Jinglun Gu, Shuyan Hu, Ying Ding, Ran Liu, and Ting-Ao Tang, “A unified carrier transport model for the nanoscale surrounding-gate MOSFET comprising quantum mechanical effects”,IEEE Transactions on Electron Devices,,2011,Vol. 58, No. 7,1830-1836
6.Guang-Xi Hu* and Ting-Ao Tang, “Some physical properties of a surrounding-gate MOSFET with undoped body”, Journal of the Korean Physical Society,,2006,vol. 49, no. 2,pp. 642-645
7.Guang-Xi Hu*, Xian-Xi Dai, Ji-Xin Dai, and William E. Evenson, “Functional integral approach to transition temperature of a homogeneous imperfect Bose gas”, Communications in Theoretical Physics ,,2004,vol. 41, no. 6,pp. 895-898
8.Guangxi Hu*, Shuyan Hu, Ran Liu, Lingli Wang, Xing Zhou, and Ting-Ao Tang, “Quasi-ballistic transport model for graphene field-effect transistor”, IEEE Transactions on Electron Devices,,2013,vol. 60, no. 7,pp. 2410-2414
9.Guang-Xi Hu*, Ran Liu, Ting-Ao Tang, Shi-Jin Ding, and Ling-Li Wang, “Theory of short-channel surrounding-gate metal-oxide-semiconductor field-effect-transistors”, Japanese Journal of Applied Physics,,2007,vol. 46, no. 4A,pp. 1437-1440
10.Guang-Xi Hu*, Xian-Xi Dai, “Functional integral approach to the transition temperature of attractive interacting Bose gas in traps”,Chinese Physics Letters,,2004,vol. 21, no. 7,pp. 1201-1204
获奖情况
更新日期:2014年3月
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