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周鹏

系别: 微电子学院
职称: 副研究员
职务:
办公室: 微电子楼401室
电话: 65642198
E-mail: pengzhou@fudan.edu.cn
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教育背景
9/1/1996至6/1/2000   复旦大学物理学系    本科学生
9/1/2000至6/1/2005   复旦大学信息科学与工程学院   博士研究生
9/1/2006至8/1/2007   首尔国立大学Inter-University半导体研究中心    访问学者
研究方向
半导体存储及应用
课程教学
本科课程:应用光伏学
研究生课程:半导体存储材料、器件与工艺
学术兼职
科研项目
国家自然科学基金项目60706033 :
论文著作
1.Applied Physics Letters 94, 053510, 2009,Role of TaON interface for CuxO resistive switching memory based on a combined model ,,,
2.Journal of Applied Physics 105(11), 061627 2009, Properties of p-n heterojunction diode based on Ge2Sb2Te5 and its application for phase change random access memory,,,
3.Chin. Phys. Lett,Thermal Stability of Reliable Polycrystalline Zirconium Oxide for Nonvolatile Memory Application ,,,3742-3745
4.Applied Physics Letters 90 (18): 183507, 2007, Reproducible unipolar resistance switching in stoichiometric ZrO2 films,,,
5.Journal of the Korean Physical Society ,Temperature and Electrode-Size Dependences of the Resistive Switching Characteristics of CuOx Thin Films,,53 (4),2283-2286
6.IEEE Electron Device Letters,Improvement of Resistive Switching in CuxO Using New RESET Mode ,,,681-683
7.Journal of Vacuum Science & Technology B,Performance improvement of CuOx with gradual oxygen concentration for nonvolatile memory application,,,1030-1033
8.Chin. Phys. Lett,Polarity-Free Resistive Switching Characteristics of CuxO Films for Non-volatile Memory Applications,,,1087-1090
9.Electrochemical and Solid-State Letters,Dynamic Threshold Switching Behavior of Ge2Sb2Te5 and Sb-doped Ge2Sb2Te5 Thin Films Using Scanning Electrical Nanoprobe,,,H281-H283
10. 2008 Joint Non-Volatile Semiconductor Memory Workshop-International Conference on Memory Technology and Design ,Improvement of Endurance and Switching Stability of Forming-free CuxO RRAM,,,
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