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万景

系别: 微纳系统中心
职称: 青年研究员
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E-mail: jingwan@fudan.edu.cn
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教育背景
2009.07至2012.10   法国格勒诺布尔大学   纳米电子与纳米技术博士
2006.09至2009.07   复旦大学   微电子与固体电子学硕士
2001.09 至2005.07   南昌大学   电子信息工程学士
研究方向
各种新型微纳半导体器件的TCAD仿真,工艺制备,器件测试和建模
1. 新型低亚阈摆幅开关和挥发性存储器 (Z2-FET)
2. 新型光电传感器
3. 隧穿场效应晶体管(Tunneling FET, TFET)
课程教学
学术兼职
如IEEE EDL,IEEE TED,IEEE TDMR, solid-state electronics, Microelectronics Journal和Journal of applied physics等杂志审稿人
科研项目
:国家青年千人计划
:复旦大学新进教师启动项目
论文著作
1.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Low-frequency noise behavior of tunneling field effect transistors”, Appl. Phys. Lett. 97, 243503 (2010). ,,,,
2.J. Wan, A. Zaslavsky, and S. Cristoloveanu, “Comment on "Investigation of tunnel field-effect transistors as a capacitor-less memory cell" [Appl. Phys. Lett. 104, 092108 (2014)]”, Appl. Phys. Lett. 106, 016101 (2015).,,,,
3.Y. Solaro, J. Wan, P. Fonteneau, C. Fenouillet-Beranger, C. Le Royer, A. Zaslavsky, P. Ferrari, S. Cristoloveanu "Z2-FET: A promising FDSOI device for ESD protection", Solid-State Electronics. 97, 23 (2014). ,,,,
4.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A systematic study of the sharp-switching Z2-FET device: from mechanism to modeling and applications”, Solid-State Electronics. 90, 2 (2013),,,,
5.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Progress in Z2-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage”, Solid-State Electronics. 84, 147 (2013),,,,
6.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A feedback silicon-on-insulator steep switching device with gate-controlled carrier injection”, Solid-State Electronics. 109, 111 (2012).,,,,
7.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration”, IEEE Electron Device Letters. 33, 179 (2012).,,,,
8.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Novel Bipolar-Enhanced Tunneling FET (BET-FET) with Simulated High ON Current”, IEEE Electron Device Letters. 34, 24 (2013). ,,,,
9.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “A tunneling field effect transistor model combining interband tunneling with channel transport”, J. Appl. Phys. 110, 104503 (2011).,,,,
10.J. Wan, C. Le Royer, A. Zaslavsky, and S. Cristoloveanu, “Tunneling FETs on SOI: Suppression of Ambipolar Leakage, Low-Frequency Noise Behavior, and Modeling”, Solid-State Electronics. 65-66, 226 (2011).,,,,
获奖情况
2016----国家青年千人
2014----IEEE EDL金牌审稿人
2013----法国纳米科学基金委优秀博士论文奖
2012----提名IEEE EDL, George E. Smith 奖
2012----VLSI-TSA最佳会议报告奖
2012----EuroSOI最佳会议报告奖
2009----上海市优秀硕士论文
2009----复旦大学优秀硕士论文
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