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张卫

系别: 微电子学院
职称: 教授 博导
职务: 微电子学系系主任
办公室:  微电子楼B212
电话: 021-65642389
E-mail: dwzhang@fudan.edu.cn
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教育背景
9/1/1984至7/1/1988   西安交通大学    本科学生
9/1/1988至6/1/1991   西安交通大学    硕士研究生
9/1/1991至5/1/1995   西安交通大学    博士研究生
6/1/1995至5/1/1997   复旦大学电子工程系   博士后
1/1/2001至5/1/2002   德国TU-Chemnitz大学访问学者   访问学者(洪堡学者)
研究方向
集成电路工艺、半导体材料、半导体器件
课程教学
本科课程:《半导体材料》
研究生课程:《纳米电子学与信息技术》、《微电子材料与工艺理论》
学术兼职
国家重大专项总体组专家
上海市科技预见专家
IEEE会员
中国真空学会会员薄膜专委会委员
中国电工技术学会工程电介质专业委员会委员
上海市电子电镀学会副主任
科研项目
国家自然科学基金(607076017):原子层淀积高介电常数栅介质的界面层抑制和性能调控
国家自然科学基金(60628403):集成电路的基础材料
上海市科委重点项目(08111100500):150mm硅片光学薄膜测量设备的研制与应用技术
论文著作
1.Applied Physics Letters,Atomic-layer-deposited Al2O3?HfO2?Al2O3 dielectrics for metal-insulator-metal capacitor applications,,,
2.Applied Physics Letters,Effect of rapid thermal annealing on optical and interfacial properties of atomic-layer-deposited Lu2O3 films on Si (100),,,
3.Applied Physics Letters,Electrical characteristics and conduction mechanisms of metal-insulator-metal capacitors with nanolaminated Al2O3-HfO2 dielectrics,,,
4.Applied Physics Letters,Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method,,,
5.Applied Physics Letters,Atomic scale study of the degradation mechanism of boron contaminated hafnium oxide,,,
6.Applied Physics Letters,Impact of germanium related defects on electrical performance of hafnium oxide,,,
7.Applied Physics Letters,First principle calculations of oxygen vacancy passivation by fluorine in hafnium oxide,,,
8.Applied Physics Letters, Quantum chemical study of the initial surface reactions of atomic layer deposition GaAs for photonic crystal fabrication,,,
9.Applied Physics Letters, Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition, Applied Physics Letters,,,
10.Applied Physics Letters,Effective passivation of slow interface states at the interface of single crystalline Gd2O3 and Si(100),,,
11.Applied Physics Letters,Multistacked Al2O3/HfO2/SiO2 tunnel layer for high-density nonvolatile memory application,,,
12.Applied Physics Letters,Comparative Study of Passivation Mechanism of Oxygen Vacancy with Fluorine in HfO2 and HfSiO4,,,
13.Applied Physics Letters,Effects of chlorine residue in atomic layer deposition hafnium oxide: A density-functional-theory study,,,
14.Applied Physics Letters,Effects of NH3 Plasma Pretreatment on Initial Reactions of Atomic Layer Deposition TaN Barrier Layer on SiOC Dielectric,,,
15.Applied Physics Letters,High density and program-erasable metal-insulator-silicon capacitor with a novel dielectric structure of SiO2/ HfO2-Al2O3 nanolaminate/Al2O3,,,
16.Applied Physics Letters,Characterization of atomic-layer-deposited Al2O3/GaAs interface improved by NH3 plasma pretreatment,,,
17.Applied Physics Letters,Quantum chemical study of the initial surface reactions of atomic layer deposition HfO2 on the hydroxylated GaAs (001)-4×2 surface,,,
18.Applied Physics Letters,Density functional theory study of adsorption and dissociation of HfCl4 and H2O on Ge/Si(100)-2x1: Initial stage of atomic layer deposition of HfO2 on SiGe surface,,,
获奖情况
复旦大学优秀研究生导师
2002----教育部科学技术二等奖(排名第2)
1999----上海市高校优秀青年教师
1999----上海市优秀博士后
1998----复旦大学复华奖
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